Transistor with indium-implanted SiGe alloy and processes for fabricating the same
US6507091B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 29, 2000 |
| Grant date | Jan 14, 2003 |
| Priority date | — |
| Expiry date | Feb 29, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An indium-implanted transistor is provided. The transistor has a silicon channel region that includes a buried layer of an Si1−xGex alloy into which indium is implanted, with 10−5≦x≦4×10−1. A first method for fabricating an indium-implanted transistor is also provided. A multilayer composite film is produced on at least one region of a surface of a silicon substrate where a channel region of the transistor is to be formed. The multilayer composite film includes at least one Si1−xGex alloy layer, in which 10−5≦x≦4×10−1, and an external silicon layer. Indium is implanted into the Si1−xGex alloy layer, and fabrication of the transistor is completed so as to produce the transistor with a channel region that includes a buried Si1−xGex alloy layer. Additionally, a second method for fabricating an indium-implanted transistor is provided. Germanium is implanted into at least one region of a silicon substrate where a channel region of a transistor is to be formed, in order to form a buried layer of an Si1−xGex alloy in which 10−5≦x≦4×10−1. Indium is implanted into the Si1−xGex alloy l…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.