Jerome Alieu
5Patents
3h-index
10Co-inventors
50Inventor score
Filing activity: Oct 4, 1999 → Sep 22, 2011
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6528399B1 | MOSFET transistor with short channel effect compensated by the gate material | Electricity | 12 | Expired |
| US6812113B1 | Process for achieving intermetallic and/or intrametallic air isolation in an integrated circuit, and integrated circuit obtained | Electricity | 6 | Expired |
| US6507091B1 | Transistor with indium-implanted SiGe alloy and processes for fabricating the same | Electricity | 3 | Expired |
| US8610048B2 | Photosensitive integrated circuit equipped with a reflective layer and corresponding method of production | Electricity | 1 | Active |
| US8044443B2 | Photosensitive integrated circuit equipped with a reflective layer and corresponding method of production | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.