Method of drying substrates
US6508014B2 · kind B2 · utility
0Cited by
14References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 16, 2001 |
| Grant date | Jan 21, 2003 |
| Priority date | — |
| Expiry date | Feb 16, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02052
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of removing water from the surface of a silicon wafer or other substrate subjected to wet processing which includes a step of water rinsing. In this method a silicon wafer whose surface includes liquid water is disposed in an atmosphere saturated with water vapor. The water vapor is removed from the surface of the silicon wafer by a stream of water-saturated gas. Upon removal of liquid water from the surface of the silicon wafer the water vapor in the water vapor saturated atmosphere is removed by evaporation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.