Kenneth T. Settlemyer, Jr.
29Patents
9h-index
47Co-inventors
71Inventor score
Filing activity: Nov 27, 2000 → Sep 16, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7434185B2 | Method and apparatus for parallel data preparation and processing of integrated circuit graphical design data | Physics | 196 | Active |
| US7018551B2 | Pull-back method of forming fins in FinFets | Electricity | 59 | Expired |
| US7410844B2 | Device fabrication by anisotropic wet etch | Electricity | 50 | Active |
| US7138308B2 | Replacement gate with TERA cap | Electricity | 22 | Expired |
| US6555430B1 | Process flow for capacitance enhancement in a DRAM trench | Emerging Cross-Sectional Technologies | 21 | Expired |
| US7122439B2 | Method of fabricating a bottle trench and a bottle trench capacitor | Electricity | 15 | Expired |
| US6967136B2 | Method and structure for improved trench processing | Electricity | 14 | Expired |
| US6664161B2 | Method and structure for salicide trench capacitor plate electrode | Electricity | 14 | Expired |
| US7563670B2 | Method for etching single-crystal semiconductor selective to amorphous/polycrystalline semiconductor and structure formed by same | Electricity | 11 | Active |
| US6723611B2 | Vertical hard mask | Electricity | 7 | Expired |
| US6936512B2 | Semiconductor method and structure for simultaneously forming a trench capacitor dielectric and trench sidewall device dielectric | Electricity | 6 | Expired |
| US7666741B2 | Corner clipping for field effect devices | Electricity | 5 | Active |
| US7497959B2 | Methods and structures for protecting one area while processing another area on a chip | Physics | 4 | Expired |
| US7696539B2 | Device fabrication by anisotropic wet etch | Electricity | 3 | Active |
| US6887761B1 | Vertical semiconductor devices | Electricity | 3 | Expired |
| US7101768B2 | Self-aligned selective hemispherical grain deposition process and structure for enhanced capacitance trench capacitor | Electricity | 3 | Expired |
| US8853746B2 | CMOS devices with stressed channel regions, and methods for fabricating the same | Electricity | 3 | Active |
| US7157328B2 | Selective etching to increase trench surface area | Electricity | 2 | Expired |
| US6565666B1 | Capillary dry process and apparatus | Emerging Cross-Sectional Technologies | 1 | Expired |
| US6797582B2 | Vertical thermal nitride mask (anti-collar) and processing thereof | Electricity | 1 | Expired |
| US6508014B2 | Method of drying substrates | Electricity | 0 | Expired |
| US9059000B2 | Methods and structures for protecting one area while processing another area on a chip | Physics | 0 | Active |
| US7670901B2 | Method of fabricating a bottle trench and a bottle trench capacitor | Electricity | 0 | Active |
| US7390745B2 | Pattern enhancement by crystallographic etching | Electricity | 0 | Expired |
| US7718993B2 | Pattern enhancement by crystallographic etching | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.