Solventless, resistless direct dielectric patterning
US6509138B2 · kind B2 · utility
5Cited by
28References
23Claims
0Family size
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Key dates
| Filing date | Jan 12, 2000 |
| Grant date | Jan 21, 2003 |
| Priority date | — |
| Expiry date | Jan 12, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Processes for patterning radiation sensitive layers are disclosed. In one embodiment, the process includes depositing a radiation sensitive material on a substrate by chemical vapor deposition. The radiation sensitive material is exposed to radiation to form a pattern and the pattern is developed using a supercritical fluid (SCF).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.