Process for fabricating an MOS device having highly-localized halo regions
US6509241B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2000 |
| Grant date | Jan 21, 2003 |
| Priority date | — |
| Expiry date | Dec 29, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for fabricating an MOS device having a highly-localized halo region includes the formation of a first halo region at a first surface of a silicon substrate, and a second halo region at a second surface of the silicon substrate. The second surface of the silicon substrate is formed by anisotropically etching the first surface of the silicon substrate to remove a portion of the material from the substrate. Both the first and second halo regions are formed by low-energy ion implantation. For the fabrication of an n-channel device, boron is implanted at an energy of no more than about 1 keV. Upon implantation and a subsequent annealing process, the first and second halo regions form a continuous halo region within the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.