Method of manufacturing semiconductor integrated circuit device having insulatro film formed from liquid containing polymer of silicon, oxygen, and hydrogen
US6509277B1 · kind B1 · utility
4Cited by
8References
26Claims
0Family size
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Key dates
| Filing date | Sep 18, 2000 |
| Grant date | Jan 21, 2003 |
| Priority date | — |
| Expiry date | Sep 29, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/315
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An SOG film 16 obtained by heat-treating a polysilazan type SOG film at high temperature of about 800° C. is used as a planarized insulating film to be formed on the gate electrode 9 of a MISFET (Qs, Qn, Qp). A polysilazan SOG film 57 not subjected to such a heat treatment is used as interlayer insulating film arranged among upper wiring layers (54, 55, 56, 62, 63).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.