Microelectronic air-gap structures and methods of forming the same
US6509623B2 · kind B2 · utility
232Cited by
11References
25Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 28, 2001 |
| Grant date | Jan 21, 2003 |
| Priority date | — |
| Expiry date | Sep 28, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved microelectronic structure is disclosed. The improved structure includes an air-gap region formed by removing an insulating material through an aperture residing in a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.