Substrate-fluorescent LED
US6509651B1 · kind B1 · utility
112Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 12, 1999 |
| Grant date | Jan 21, 2003 |
| Priority date | — |
| Expiry date | Jul 12, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/48257
Abstract
A substrate-fluorescent LED having a fluorescent-impurity doped substrate and an epitaxial emission structure including an active layer and being made on the substrate. The epitaxial emission structure emits blue or green light corresponding to the band gap of the active layer. The substrate absorbs a part of the blue or green light and makes fluorescence of a longer wavelength. Neutral color light or white light is emitted from the LED. The fluorescent substrate is n-AlGaAs(Si dope), GaP(Zn+O dope), ZnSe(Cu+I, Ag+I, Al+I dope), GaN(O.C.Va(N) dope) or so.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.