Apparatus and method for growth of a thin film
US6511539B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 8, 1999 |
| Grant date | Jan 28, 2003 |
| Priority date | — |
| Expiry date | Sep 8, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An improved apparatus and method for substrate layer deposition in which substrate layers are grown by carrier gas delivery of sequential pulses of reactants to the substrate surface. At least one of the reactants comprises excited species, e.g., radicals. In a specific embodiment, the apparatus of this invention provides sequential repeated pulses of reactants in a flow of carrier gas for reaction at a substrate surface. The reactant pulses are delivered with sufficient intervening delay times to minimize undesirable reaction between reactants in adjacent pulses in the gas phase or undesired uncontrolled reactions on the substrate surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.