Utilizing atomic layer deposition for programmable device
US6511867B2 · kind B2 · utility
389Cited by
16References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2001 |
| Grant date | Jan 28, 2003 |
| Priority date | — |
| Expiry date | Jun 30, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In an aspect, an apparatus is provided that sets and reprograms the state of programmable devices. In an aspect, a method is provided such that an opening is formed through a dielectric exposing a contact, the contact formed on a substrate. An electrode is conformally deposited on a wall of the dielectric, utilizing atomic layer deposition (ALD). A programmable material is formed on the electrode and a conductor is formed to the programmable material. In an aspect, a barrier is conformally deposited utilizing ALD, between the electrode and the programmable material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.