Ovonyx Inc.
266Patents
143Active
266Granted
49Portfolio score
Filing activity: Mar 25, 1999 → Jul 21, 2014 · 113 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6613604B2 | Method for making small pore for use in programmable resistance memory element | Electricity | 423 | Expired |
| US6566700B2 | Carbon-containing interfacial layer for phase-change memory | Electricity | 412 | Expired |
| US6593176B2 | METHOD FOR FORMING PHASE-CHANGE MEMORY BIPOLAR ARRAY UTILIZING A SINGLE SHALLOW TRENCH ISOLATION FOR CREATING AN INDIVIDUAL ACTIVE AREA REGION FOR TWO MEMORY ARRAY ELEMENTS AND ONE BIPOLAR BASE CONTACT | Electricity | 400 | Expired |
| US6534781B2 | Phase-change memory bipolar array utilizing a single shallow trench isolation for creating an individual active area region for two memory array elements and one bipolar base contact | Electricity | 391 | Expired |
| US6511867B2 | Utilizing atomic layer deposition for programmable device | Electricity | 389 | Expired |
| US6621095B2 | Method to enhance performance of thermal resistor device | Electricity | 389 | Expired |
| US6567293B1 | Single level metal memory cell using chalcogenide cladding | Electricity | 387 | Expired |
| US6589714B2 | Method for making programmable resistance memory element using silylated photoresist | Electricity | 384 | Expired |
| US6673700B2 | Reduced area intersection between electrode and programming element | Physics | 375 | Expired |
| US6314014A | Programmable resistance memory arrays with reference cells | Physics | 317 | Expired |
| US6487113B1 | Programming a phase-change memory with slow quench time | Physics | 249 | Expired |
| US6617192B1 | Electrically programmable memory element with multi-regioned contact | Physics | 247 | Expired |
| US6667900B2 | Method and apparatus to operate a memory cell | Physics | 239 | Expired |
| US6570784B2 | Programming a phase-change material memory | Physics | 225 | Expired |
| US6480438B1 | Providing equal cell programming conditions across a large and high density array of phase-change memory cells | Physics | 214 | Expired |
| US6687153B2 | Programming a phase-change material memory | Physics | 209 | Expired |
| US6933516B2 | Forming tapered lower electrode phase-change memories | Physics | 208 | Expired |
| US6511862B2 | Modified contact for programmable devices | Electricity | 204 | Expired |
| US6545907B1 | Technique and apparatus for performing write operations to a phase change material memory device | Physics | 203 | Expired |
| US6531373B2 | Method of forming a phase-change memory cell using silicon on insulator low electrode in charcogenide elements | Electricity | 193 | Expired |
| US6696355B2 | Method to selectively increase the top resistance of the lower programming electrode in a phase-change memory | Physics | 178 | Expired |
| US6800563B2 | Forming tapered lower electrode phase-change memories | Physics | 177 | Expired |
| US6646297B2 | Lower electrode isolation in a double-wide trench | Electricity | 175 | Expired |
| US7023009B2 | Electrically programmable memory element with improved contacts | Physics | 174 | Expired |
| US6563164B2 | Compositionally modified resistive electrode | Physics | 170 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.