High-dielectric constant insulators for FEOL capacitors

US6511873B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Arne Ballantine · Palo Alto, US
• Douglas A. Buchanan · Somers, US
• Eduard A. Cartier · New York, US
• Douglas D. Coolbaugh · Highland, US
• Evgeni Gousev · Saratoga, US
• Harald Okorn-Schmidt · Putnam Valley, US

Key dates

• Filing date: Jun 15, 2001
• Grant date: Jan 28, 2003
• Expiry date: Jun 15, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/693
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods of forming front-end-of the line (FEOL) capacitors such as polysilicon-polysilicon capacitors and metal-insulator-silicon capacitors are provided that are capable of incorporating a high-dielectric constant (k of greater than about 8) into the capacitor structure. The inventive methods provide high capacitance/area devices with low series resistance of the top and bottom electrodes for high frequency responses. The inventive methods provide a significant reduction in chip size, especially in analog and mixed-signal applications where large areas of capacitance are used.