Method of fabricating a semiconductor device
US6511890B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 19, 1999 |
| Grant date | Jan 28, 2003 |
| Priority date | — |
| Expiry date | Oct 19, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0227
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention related to a method of fabricating a semiconductor device which prevents short channel hump due to the moisture in an insulating interlayer. The present invention includes the steps of forming a trench typed field oxide layer defining an active area in a field area of a semiconductor substrate of a first conductive type, forming a gate to the direction of device width wherein a gate oxide layer is inserted between the gate and semiconductor substrate, forming impurity regions in the semiconductor substrate at both sides of the gate by ion implantation with impurities of a second conductive type, forming an insulating interlayer covering the gate on the semiconductor substrate, and removing moisture contained in the insulating interlayer by thermal treatment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.