Semiconductor laser and method of manufacturing the same
US6512783B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 3, 1999 |
| Grant date | Jan 28, 2003 |
| Priority date | — |
| Expiry date | Dec 3, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
There is provided a semiconductor laser which comprises a first cladding layer formed of compound semiconductor having first conductivity type impurity and having a mesa-shaped projection, an active layer formed on the projection like a stripe and having side surfaces which are inclined at an angle of more than 70 degrees but less than 90 degrees relative to an upper surface of the first cladding layer, buried layers formed on both sides of the projection and having second conductivity type impurity, current blocking layers each having one end which contacts a virtual surface obtained by extending upward a side surface of the active layer and having a first facet which extends downward from the one end and is inclined by about 55 degrees relative to the upper surface of the first cladding layer and formed on each buried layer and having the first conductivity type impurity, and second cladding layers formed on the current blocking layers and the active layer and having the second conductivity type impurity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.