CMOS image sensor n-type pin-diode structure
US6514785B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2000 |
| Grant date | Feb 4, 2003 |
| Priority date | — |
| Expiry date | Jun 21, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/802
Abstract
A method of forming an image sensor is disclosed. A partially processed semiconductor wafer is provide, containing p-type and/or n-type regions which are bounded by isolation regions and with gate oxide layers grown on the surfaces upon which gate electrode structures are disposed, some of said gate electrode structures will serve as gate electrodes of image sensor transistors. Ions are implanted to form source/drain structures about the said gate electrode structures. To form photodiodes ions are implanted in two steps overlapping a source/drain region. A deeper implant provides a low charge carrier density region and a shallow implant provides a high charge carrier density region near the surface. A blanket transparent insulating layer is deposited.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.