Trench sidewall profile for device isolation
US6514805B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2001 |
| Grant date | Feb 4, 2003 |
| Priority date | — |
| Expiry date | Jun 30, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method comprising forming a first trench in a substrate, and forming a second trench in the substrate, the second trench intersecting the first trench and having a retrograde sidewall profile relative to a direction from a top of the trench to a bottom of the trench. An apparatus comprising a matrix of cells in a substrate formed by a plurality of first trenches and a plurality of second trenches, the plurality of second trenches intersecting the plurality of first trenches and having a retrograde sidewall profile relative to a direction from a top to a bottom of the respective trench; and an electrically accessible storage device coupled to respective ones of the matrix of cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.