Method for use in manufacturing a semiconductor device
US6514869B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 9, 2001 |
| Grant date | Feb 4, 2003 |
| Priority date | — |
| Expiry date | Aug 9, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67109
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a semiconductor device manufacturing method for processing a plurality of substrates by alternately repeating a pretreatment stage and a continuous substrate processing stage, the continuous substrate processing stage comprises the steps of: loading a substrate on a heater unit located at a substrate loading/unloading position, the heater unit supporting and heating the substrate; processing the loaded substrate after transferring the heater unit having thereon the loaded substrate to a substrate processing position; unloading the processed substrate; and repeating the loading step, the processing step and the unloading step until a set of substrates are processed, and wherein the pretreatment stage is carried out by maintaining the heater unit between the substrate loading/unloading position and the substrate processing position.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.