Method of manufacturing a semiconductor device
US6514872B1 · kind B1 · utility
3Cited by
0References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 6, 2000 |
| Grant date | Feb 4, 2003 |
| Priority date | — |
| Expiry date | Oct 6, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76802
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Lower metal wiring is formed on a base insulating film. A BCB film which is formed of a BCB (benzocyclobutene) resin is formed on the base insulating film and metal wiring. A SiO2 film is formed on the BCB film. A resist film is formed on the SiO2 film, and patterned using a lithography technique. The SiO2 film is etched using the resist film as a mask. The BCB film is anisotropically etched with a mixture of Cl2/BCl3/O2 using the SiO2 film as a mask, thereby to form a contact hole. The contact hole is filled with a conductor, thereby forming upper metal wiring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.