Ferroelectric memory device having improved ferroelectric characteristics
US6515323B1 · kind B1 · utility
18Cited by
7References
6Claims
0Family size
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Key dates
| Filing date | Oct 30, 2000 |
| Grant date | Feb 4, 2003 |
| Priority date | — |
| Expiry date | Oct 30, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
Abstract
A ferroelectric capacitor with a ferroelectric film having a relatively larger amount of titanium constituent than zirconate constituent improves ferroelectric characteristics. The method for fabricating the ferroelectric capacitor includes the step of performing a heat treatment in an oxygen atmosphere after forming a contact opening in an insulating layer which covers an already formed ferroelectric capacitor. This heat treatment in an oxygen atmosphere can minimize undesirable side effects resulting from a platinum electrode oxidizing the ferroelectric film components.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.