Copolymer, photoresist composition, and process for forming resist pattern with high aspect ratio
US6517993B2 · kind B2 · utility
12Cited by
6References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2001 |
| Grant date | Feb 11, 2003 |
| Priority date | — |
| Expiry date | Aug 5, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/111
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A novel copolymer includes a repeating unit (A) represented by, for example, Formula (I) below, and a repeating unit (B) derived from an unsaturated carboxylic anhydride. The novel copolymer is suitable for the preparation of a photoresist composition that has satisfactory transparency, high sensitivity and definition and exhibits satisfactory DOF properties in the field of photolithography using a deep UV light source. By the use of the photoresist composition, a process forms a resist pattern with a high aspect ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.