Patent · US Expired

Multi-layer diodes and method of producing same

US6518101B1 · kind B1 · utility

1Cited by
3References
9Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 13, 2001
Grant dateFeb 11, 2003
Priority date
Expiry dateDec 13, 2021

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/676

Abstract

It is proposed to implement the emitter short-circuit structure of a multilayer diode by providing grooves which cut through topmost layer 2 of the multilayer diode. A metal layer 20 applied thereon electrically shorts the topmost layer to subjacent layer 3.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.