Multi-layer diodes and method of producing same
US6518101B1 · kind B1 · utility
1Cited by
3References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2001 |
| Grant date | Feb 11, 2003 |
| Priority date | — |
| Expiry date | Dec 13, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/676
Abstract
It is proposed to implement the emitter short-circuit structure of a multilayer diode by providing grooves which cut through topmost layer 2 of the multilayer diode. A metal layer 20 applied thereon electrically shorts the topmost layer to subjacent layer 3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.