Method of forming an insulating zone
US6518114B2 · kind B2 · utility
3Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2001 |
| Grant date | Feb 11, 2003 |
| Priority date | — |
| Expiry date | Mar 23, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method of forming an insulating zone (14) around an active zone (12) in a semiconductor substrate, which method includes the following steps: forming a groove around an active zone (12) in the substrate; and filling the groove with a first material so as to form around the active zone an insulating zone (14) which projects from the surface of the substrate and forms a vertical protrusion at its periphery; and blunting the angle of the protrusion of the insulating zone at the periphery at the active zone. The invention further relates to a semiconductor device formed using said method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.