Niobium or vanadium substituted strontium titanate barrier intermediate a silicon underlayer and a functional metal oxide film
US6518609B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 31, 2000 |
| Grant date | Feb 11, 2003 |
| Priority date | — |
| Expiry date | Aug 31, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A ferroelectric memory cell formed on a monocrystalline silicon underlayer, either an epitaxial silicon contact plug to a transistor source or drain or silicon gate region for which the memory cell forms a non-volatile gate. A conductive barrier layer of vanadium or niobium substituted strontium titanate is epitaxially grown over the silicon, and a lower metal oxide electrode layer, a ferroelectric layer and an upper metal oxide electrode layer are epitaxially grown on the barrier layer. No platinum barrier is needed beneath the ferroelectric stack. The invention can be applied to many other functional oxide devices including micromachined electromechanical (MEM) devices and ferromagnetic tri-layer devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.