Vertical replacement gate (VRG) MOSFET with a conductive layer adjacent a source/drain region and method of manufacture therefor

US6518622B1 · kind B1 · utility

Assignee

• Agere Systems Inc. · US

Inventors

• Hongzong Chew · Allentown, US
• Yih-Feng Chyan · Orlando, US
• John Michael Hergenrother · Ridgefield, US
• Yi Ma · Orlando, US
• Donald Monroe · Berkeley Heights, US

Key dates

• Filing date: Mar 20, 2000
• Grant date: Feb 11, 2003
• Expiry date: Mar 20, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

The present invention provides a VRG structure formed on a semiconductor wafer substrate. The VRG structure has a first source/drain region located in a semiconductor wafer substrate, and a conductive layer located adjacent the source/drain region, a second source/drain region and a conductive channel that extends from the first source/drain region to the second source/drain region. The conductive layer provides an electrical connection to the first source/drain region. The conductive layer may have a low sheet resistance that may be less than about 50 &OHgr;/square or less than about 20 &OHgr;/square, to the first source/drain region.