Tri-layer dielectric fuse cap for laser deletion
US6518643B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2001 |
| Grant date | Feb 11, 2003 |
| Priority date | — |
| Expiry date | Mar 23, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate having at least one fuse in a fuse layer. An upper etch-stop layer over the fuse, a lower etch-stop layer having a different etch-chemistry over the fuse and, optionally, a diffusion barrier layer immediately over the fuse. The lower etch-stop later and the optional diffusion barrier providing a uniform passivation thickness for use in conjunction with laser fuse deletion processes. An upper etch-resistant layer over the lower etch-resistant layer and having an etch chemistry selective to that of the lower etch-resistant layer. Methods for providing a uniform passivation thickness over all the fuses, and for deleting such fuses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.