Method of producing a piezoelectric thin film and bulk acoustic wave resonator fabricated according to the method
US6521100B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 2, 2001 |
| Grant date | Feb 18, 2003 |
| Priority date | — |
| Expiry date | Mar 5, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/42
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of use in fabricating a device comprising a thin film of material, the fabrication using magnetron sputtering to deposit the thin film on a surface of some other material, the method including the step of: performing successive sputtering cycles, each cycle including sputtering at a first gas pressure so as to achieve a predetermined first thickness, and sputtering at a second, different gas pressure, so as to obtain a predetermined second thickness. The thin film so deposited has an average stress intermediate between the first stress and the second stress, an average stress that can be made to be approximately equal to a predetermined intermediate stress by a judicious choice of the time for sputtering at each of the two pressures. Usually, the thin film is built up incrementally, using many successive cycles of sputtering at first the first gas pressure and then the second gas pressure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.