Method for making a thyristor
US6521487B1 · kind B1 · utility
23Cited by
7References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2001 |
| Grant date | Feb 18, 2003 |
| Priority date | — |
| Expiry date | Dec 5, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/676
Abstract
A semiconductor substrate has at least one active area and a STI surrounding the active area. An N-well and an adjacent P-well are formed in the active area. A dummy gate is formed atop the border between the N-well and the P-well, while simultaneously forming gates for other MOS transistors on the semiconductor substrate. A spacer is formed on the periphery of each gate. Finally, an N-type ion implantation process and a P-type ion implantation process are performed to form a cathode and an anode for the silicon controlled rectifier device in the P-well and the N-well between the STI and the dummy gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.