Semiconductor device and method of manufacturing the same
US6521509B2 · kind B2 · utility
1Cited by
5References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2001 |
| Grant date | Feb 18, 2003 |
| Priority date | — |
| Expiry date | Jun 25, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A highly reliable semiconductor device is provided. A silicon nitride film having an opening is formed on a main surface of a silicon substrate. The opening is formed with a side surface. The silicon substrate is etched using the silicon nitride film as a mask to form a trench. The side surface of the silicon nitride film is altered in quality to form a silicon oxide film. A silicon oxide film filling the trench is formed in contact with the silicon oxide film. The silicon nitride film is removed with the silicon oxide film in contact with the silicon oxide film remaining.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.