Method of forming a trench with a rounded bottom in a semiconductor device
US6521538B2 · kind B2 · utility
84Cited by
12References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2001 |
| Grant date | Feb 18, 2003 |
| Priority date | — |
| Expiry date | Feb 23, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method for manufacturing a semiconductor device, first, a trench is formed on a semiconductor substrate by anisotropic etching, and a reaction product is produced and deposited on the inner wall of the trench during the anisotropic etching. Then, isotropic etching is performed to round a corner of a bottom portion of the trench without removing the reaction product. The isotropic etching can round the corner of the trench without etching the side wall of the trench that is covered by the reaction product.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.