Method of repairing a low dielectric constant material layer
US6521547B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2001 |
| Grant date | Feb 18, 2003 |
| Priority date | — |
| Expiry date | Sep 7, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76802
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of repairing a low dielectric constant (low k) material layer starts with coating a photoresist layer on the low k material layer on a semiconductor wafer. After transferring a pattern of the photoresist layer to the low k material layer, an oxygen plasma ashing process is performed to remove the photoresist layer. Finally, by contacting the low k material layer with a solution of alkyl silane comprising an alkyl group and halo substituent, Si—OH bonds formed in the low k layer during the oxygen plasma ashing process are removed so as to repair damage to the low k material layer caused by the oxygen plasma ashing process, and to enhance a surface of the low k material layer to a hydrophobic surface to prevent moisture adhering to the surface of the low k material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.