Process for manufacturing semiconductor integrated circuit device including treatment of gas used in the process
US6521550B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 19, 2001 |
| Grant date | Feb 18, 2003 |
| Priority date | — |
| Expiry date | Oct 19, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
In a gas-phase treating process of a semiconductor wafer using hydrogen, there is provided a technique for safely eliminating the hydrogen in an exhaust gas discharged from a gas-phase treating apparatus. The profile at the end portions of the side walls of gate electrodes of a poly-metal structure is improved by forming the gate electrodes over a semiconductor wafer IA having a gate oxide film and then by supplying the semiconductor wafer 1A with a hydrogen gas containing a low concentration of water, as generated from hydrogen and oxygen by catalytic action, to oxidize the principal face of the semiconductor wafer 1A selectively. After this, the hydrogen in the exhaust gas, as discharged from an oxidizing furnace, is completely converted into water by causing it to react with oxygen by a catalytic method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.