Thin film semiconductor device containing polycrystalline Si-Ge alloy and method for producing thereof
US6521909B2 · kind B2 · utility
5Cited by
2References
6Claims
0Family size
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Key dates
| Filing date | Feb 23, 2001 |
| Grant date | Feb 18, 2003 |
| Priority date | — |
| Expiry date | Feb 23, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/933
Abstract
A high performance thin film transistor is provided containing polycrystalline Si-Ge alloy. The TFT has a crystal structure restraining both current scattering in a grain boundary and surface roughness by introduction of Ge into Si. This permits realizing an image display device having high performance and a large area at low cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.