III-Nitride Light-emitting device with increased light generating capability
US6521914B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2002 |
| Grant date | Feb 18, 2003 |
| Priority date | — |
| Expiry date | Mar 29, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/142
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resistance. The p-electrode metallization is opaque, highly reflective, and provides excellent current spreading. The p-electrode at the peak emission wavelength of the LED active region absorbs less than 25% of incident light per pass. A submount may be used to provide electrical and thermal connection between the LED die and the package. The submount material may be Si to provide electronic functionality such as voltage-compliance limiting operation. The entire device, including the LED-submount interface, is designed for low thermal resistance to allow for high current density operation. Finally, the device may include a high-refractive-index (n>1.8) superstrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.