Semiconductor device having contact of Si-Ge combined with cobalt silicide
US6521956B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 4, 2002 |
| Grant date | Feb 18, 2003 |
| Priority date | — |
| Expiry date | Jan 4, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/09
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a metal contact of SiGe combined with cobalt silicide and cobalt. The contact resistance is greatly lowered due to both the low Schottky Barrier Height of SiGe and the low sheet resistance of cobalt silicide. The cobalt layer can serve as a glue layer and diffusion barrier layer. Thus, no additional glue layer or diffusion barrier layer needs to be formed. Moreover, the metal contact of the present invention can be integrated with a DRAM by a hybrid contact method. Implantation contact is used in pFET regions and diffusion contact is used in nFET regions. This can reduce mask steps and production costs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.