High pressure piezoresistive transducer suitable for use in hostile environments and method for making the same
US6523415B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2001 |
| Grant date | Feb 25, 2003 |
| Priority date | — |
| Expiry date | Aug 6, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/42
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A pressure transducer including: a silicon substrate including: a first surface adapted for receiving a pressure applied thereto, an oppositely disposed second surface, and a flexing portion adapted to deflect when pressure is applied to the first surface; at least a first sensor formed on the second surface and adjacent to a center of the flexing portion, and adapted to measure the pressure applied to the first surface; at least a second gauge sensor formed on the second surface and adjacent to a periphery of the flexing portion, and adapted to measure the pressure applied to the first surface; a glass substrate secured to the second surface of the silicon wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.