Process for forming a large area, high gate current HEMT diode
US6524899B1 · kind B1 · utility
10Cited by
10References
11Claims
0Family size
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Key dates
| Filing date | Sep 21, 2000 |
| Grant date | Feb 25, 2003 |
| Priority date | — |
| Expiry date | Oct 16, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/015
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a HEMT IC using a citric acid etchant. In order that gates of different sizes may be formed with a single etching step, a citric acid etchant is used which includes potassium citrate, citric acid and hydrogen peroxide. The wafer is first spin coated with a photoresist which is then patterned by optical lithography. The wafer is dipped in the etchant to etch the exposed semiconductor material. Metal electrodes are evaporated onto the wafer and the remaining photoresist is removed with solvent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.