Michael E. Barsky
15Patents
6h-index
21Co-inventors
62Inventor score
Filing activity: Jan 26, 2000 → Sep 8, 2011
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6515316B1 | Partially relaxed channel HEMT device | Electricity | 51 | Expired |
| US6452221B1 | Enhancement mode device | Electricity | 12 | Expired |
| US6638366B2 | Automated spray cleaning apparatus for semiconductor wafers | Performing Operations; Transporting | 10 | Expired |
| US6524899B1 | Process for forming a large area, high gate current HEMT diode | Electricity | 10 | Expired |
| US6551905B1 | Wafer adhesive for semiconductor dry etch applications | Electricity | 9 | Expired |
| US7041579B2 | Hard substrate wafer sawing process | Electricity | 7 | Expired |
| US8026132B2 | Leakage barrier for GaN based HEMT active device | Electricity | 5 | Active |
| US6245687A | Precision wide band gap semiconductor etching | Electricity | 5 | Expired |
| US6383826B1 | Method for determining etch depth | Electricity | 3 | Expired |
| US6710379B2 | Fully relaxed channel HEMT device | Electricity | 3 | Expired |
| US7709860B2 | High electron mobility transistor semiconductor device and fabrication method thereof | Electricity | 2 | Active |
| US8809137B2 | Leakage barrier for GaN based HEMT active device | Electricity | 0 | Active |
| US8809907B2 | Leakage barrier for GaN based HEMT active device | Electricity | 0 | Expired |
| US6396679B1 | Single-layer dielectric structure with rounded corners, and circuits including such structures | Electricity | 0 | Expired |
| US6764573B2 | Wafer thinning techniques | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.