Method for manufacturing a gate structure incorporating therein aluminum oxide as a gate dielectric
US6524918B2 · kind B2 · utility
14Cited by
11References
13Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 19, 2000 |
| Grant date | Feb 25, 2003 |
| Priority date | — |
| Expiry date | Dec 19, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a gate structure begins by preparing a semiconductor substrate provided with an isolation region formed therein. An aluminum oxide (Al2O3) layer is deposited on top of the semiconductor substrate and then, silicon ions plasma doping is carried out. Thereafter, the Al2O3 layer doped with silicon ions is annealed in the presence of oxygen gas or nitrous oxygen to remove a metallic vacancy in the Al2O3 layer. Subsequently, a conductive layer is formed on top of the Al2O3 layer. Finally, the conductive layer is patterned into the gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.