Method of forming thin film onto semiconductor substrate
US6524955B2 · kind B2 · utility
9Cited by
7References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2001 |
| Grant date | Feb 25, 2003 |
| Priority date | — |
| Expiry date | Apr 1, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4404
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a plasma CVD apparatus including a reaction chamber and a susceptor to form a thin film on a semiconductor substrate, a pretreatment step is conducted to form a surface layer on the surface of the susceptor so that the surface layer can prevent the semiconductor substrate from electrostatically adhering to the surface of the susceptor. The pretreatment step includes steps of introducing into the reaction chamber a gas containing, the same gas as the gas for use in a film-forming treatment, and forming a surface layer on the susceptor surface by a CVD process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.