Dielectric films and capacitor structures including same
US6525365B1 · kind B1 · utility
9Cited by
14References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2000 |
| Grant date | Feb 25, 2003 |
| Priority date | — |
| Expiry date | Aug 31, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for forming a dielectric film, e.g., a barium-strontium-titanate film, preferably having a thickness of less than about 600 å. According to the present invention, the dielectric film is preferably formed using a chemical vapor deposition process in which an interfacial layer and a bulk layer are formed. The interfacial layer has an atomic percent of titanium less than or equal to the atomic percent of titanium in the bulk layer. Such films are particularly advantageous for use in memory devices, such as dynamic random access memory (DRAM) devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.