Power semiconductor device having trench gate structure and method for manufacturing the same
US6525373B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 28, 1999 |
| Grant date | Feb 25, 2003 |
| Priority date | — |
| Expiry date | Jun 28, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/661
Abstract
A power semiconductor device having a trench gate structure in which it is possible to reduce the number of required masks and to improve its characteristics, and a method for manufacturing the same, includes a semiconductor substrate and a semiconductor region of a first conductive type formed on the semiconductor substrate. A source region of a second conductive type is formed on the semiconductor region. A trench is formed to pass through the source region and the semiconductor region of the first conductive layer. A first conductive layer formed to be insulated from the semiconductor substrate by interposing a gate insulating film, and a gate formed of a second conductive layer surrounded by the first conductive layer are formed in the trench. An interlayer dielectric film is formed on the semiconductor substrate. A gate electrode is formed connected to the gate through a contact hole formed in the interlayer dielectric film. A source electrode is formed connected to the source region through a second contact hole formed in the interlayer dielectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.