Fairchild Korea Semiconductor Ltd.
355Patents
254Active
355Granted
56Portfolio score
Filing activity: Apr 4, 1997 → Nov 19, 2018 · 132 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6329706A | Leadframe using chip pad as heat conducting path and semiconductor package adopting the same | Electricity | 87 | Expired |
| US6432750B1 | Power module package having insulator type heat sink attached to rear surface of lead frame and manufacturing method thereof | Electricity | 77 | Expired |
| US6774465B2 | Semiconductor power package module | Electricity | 76 | Expired |
| US6392275B1 | Semiconductor device with DMOS, BJT and CMOS structures | Electricity | 71 | Expired |
| US7315077B2 | Molded leadless package having a partially exposed lead frame pad | Electricity | 70 | Expired |
| US7061080B2 | Power module package having improved heat dissipating capability | Electricity | 67 | Expired |
| US7684216B2 | Quasi resonant switching mode power supply | Emerging Cross-Sectional Technologies | 67 | Active |
| US6051488A | Methods of forming semiconductor switching devices having trench-gate electrodes | Electricity | 64 | Expired |
| US6756689B2 | Power device having multi-chip package structure | Electricity | 63 | Expired |
| US6025237A | Methods of forming field effect transistors having graded drain region doping profiles therein | Electricity | 55 | Expired |
| US6574107B2 | Stacked intelligent power module package | Electricity | 51 | Expired |
| US6833585B2 | High voltage lateral DMOS transistor having low on-resistance and high breakdown voltage | Electricity | 49 | Expired |
| US7834378B2 | SCR controlled by the power bias | Electricity | 49 | Active |
| US6525373B1 | Power semiconductor device having trench gate structure and method for manufacturing the same | Electricity | 48 | Expired |
| US6252783A | Switching power supply having a low power burst mode | Emerging Cross-Sectional Technologies | 48 | Expired |
| USRE44228E1 | Switching mode power supply and driving method | General | 46 | Active |
| US6621152B2 | Thin, small-sized power semiconductor package | Electricity | 45 | Expired |
| US9467137B2 | Input current control method, switch control circuit and power supply including the switch control circuit | Electricity | 44 | Active |
| US7054169B2 | Switched-mode power supply supporting burst-mode operation | Emerging Cross-Sectional Technologies | 42 | Expired |
| US6133712A | Battery charge controller having an adjustable termination current | Electricity | 41 | Expired |
| US7199461B2 | Semiconductor package suitable for high voltage applications | Electricity | 41 | Expired |
| US6191565A | Power factor compensation controller | Emerging Cross-Sectional Technologies | 37 | Expired |
| US6909143B2 | Lateral double-diffused MOS transistor having multiple current paths for high breakdown voltage and low on-resistance | Electricity | 36 | Expired |
| US7208819B2 | Power module package having improved heat dissipating capability | Electricity | 35 | Expired |
| US7675148B2 | Power module having stacked flip-chip and method of fabricating the power module | Electricity | 33 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.