MIS semiconductor device with low on resistance and high breakdown voltage
US6525390B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2001 |
| Grant date | Feb 25, 2003 |
| Priority date | — |
| Expiry date | Feb 27, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/153
Abstract
The invention provides a semiconductor device, manufactured with low manufacturing costs, that prevents the breakdown voltage from lowering. The semiconductor device according to the invention includes a p-type highly resistive semiconductor substrate; an n-type offset region in the surface portion of the substrate; a p-type base region in the surface portion of the substrate, the base region including an n+-type source region in the surface portion thereof, the base region including a channel portion in the extended portion thereof extended between the source region and the n-type offset region; a p-type offset region in the surface portion of the n-type offset region, the potential of the p-type offset region being fixed at the source potential; an n+-type drain region in the surface portion of the n-type offset region; a field oxide film on the p-type offset region; a gate oxide film on the channel portion of the base region; a gate electrode on the gate oxide film; a source electrode on source region; a drain electrode on the drain region; an interlayer film; a protection film; and a spiral polysilicon thin film on the field oxide film, one end of the thin film being connected …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.