High performance via capacitor and method for manufacturing same
US6525922B2 · kind B2 · utility
6Cited by
8References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2000 |
| Grant date | Feb 25, 2003 |
| Priority date | — |
| Expiry date | Feb 17, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A capacitor structure is formed on a substrate member having one or more via holes therein. Metallization portions within the via holes of the substrate member form part of the plates of the capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.