Method and circuit for programming a multilevel non-volatile memory
US6525961B2 · kind B2 · utility
18Cited by
3References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2001 |
| Grant date | Feb 25, 2003 |
| Priority date | — |
| Expiry date | Sep 12, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C8/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A circuit and method for programming a multilevel nonvolatile memory are disclosed. The circuit uses one or more address pins as one or more synchronization signals during a programming operation. The circuit includes a counter, controlled by the one or more address pins, for selecting a programming voltage to apply to an addressed memory cell. The circuit further includes compare circuitry for comparing the data value stored in the addressed memory cell with a desired data value. The counter is selectively incremented to apply a higher voltage for further programming of the addressed memory cell, based up the comparison.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.