Dry clean method instead of traditional wet clean after metal etch
US6526996B1 · kind B1 · utility
53Cited by
18References
20Claims
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Key dates
| Filing date | Jun 12, 2000 |
| Grant date | Mar 4, 2003 |
| Priority date | — |
| Expiry date | Aug 30, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dry cleaning method for use in semiconductor fabrication, including the following steps. An etched metallization structure is provided and placed in a processing chamber. The etched metallization structure is cleaned by introducing a fluorine containing gas/oxygen containing gas mixture into the processing chamber proximate the etched metallization structure without the use of a downstream microwave while applying a magnetic field proximate the etched metallization structure and maintaining a pressure of less than about 50 millitorr within the processing chamber for a predetermined time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.