Substrate for diamond stencil mask and method for forming
US6528215B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 7, 2000 |
| Grant date | Mar 4, 2003 |
| Priority date | — |
| Expiry date | Mar 3, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/20
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In accordance with the present invention, a method for forming a stencil mask from a difficult to form material, such as diamond, is provided. A stencil mask formed of diamond in accordance with the present invention provides advantageous properties of heat transmission and stiffness. The method in accordance with the present invention utilizes a nucleation layer over an etch stop layer. The nucleation layer facilitates the growth of a diamond film. The etch stop layer may comprise a buried oxide layer and the nucleation layer may comprise a thin layer of silicon. The buried oxide layer provides an etch stop for use in the definition of the diamond membrane and in the etching of the diamond layer to form the stencil. The use of the buried oxide layer as an etch stop provides improved profile control of the etches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.