MOSFET transistor with short channel effect compensated by the gate material
US6528399B1 · kind B1 · utility
12Cited by
9References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 29, 2000 |
| Grant date | Mar 4, 2003 |
| Priority date | — |
| Expiry date | Jun 29, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A MOSFET transistor comprising a gate made of silicon-germanium alloy, formed on a single crystal silicon substrate by means of a thin insulating layer, and drain and source regions implanted in the substrate on each side of the gate, characterized in that the gate comprises side regions presenting an increasing germanium percentage towards the sides of the gate facing the drain and source regions. Advantage: compensation of the short channel effect by locally decreasing the work function of the gate material near the drain and source regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.