Enhancement mode RF device and fabrication method
US6528405B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 18, 2000 |
| Grant date | Mar 4, 2003 |
| Priority date | — |
| Expiry date | Feb 18, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/4735
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An enhancement mode RF device and method of fabrication includes a stack of compound semiconductor layers, including a central layer defining a device channel, a doped cap layer, and a buffer epitaxially grown on a substrate. Source and drain implant areas, extending at least into the buffer, are formed to define an implant free area in the device channel between the source and drain. Source and drain metal contacts are positioned on an upper surface of the central layer. Several layers of insulation and dielectric are positioned over the device and a gate opening is formed and filled with gate metal. During epitaxial growth, the doped cap layer is tailored with a thickness and a doping to optimize channel performance including gate-drain breakdown voltage and channel resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.